Filling of hole arrays with InAs quantum dots

Filling of hole arrays with InAs quantum dots.

Focused ion beams are used to pattern GaAs(001) surfaces with an array of nanometer-deep holes upon which deposition of InAs results in quantum dot formation at the hole location. Experiments show that the size and quantity of quantum dots formed depend on growth parameters, and ion dose, which affects the size and shape of the resulting holes. Quantum dots fabricated in this fashion have a pho...

Coulomb-interaction-induced incomplete shell filling in the hole system of InAs quantum dots.

We have studied the hole charging spectra of self-assembled InAs quantum dots in perpendicular magnetic fields by capacitance-voltage spectroscopy. From the magnetic-field dependence of the individual peaks we conclude that the s-like ground state is completely filled with two holes but that the fourfold degenerate p shell is only half filled with two holes before the filling of the d shell sta...

Conductance in quantum wires by three quantum dots arrays

A noninteracting quantum-dot arrays side coupled to a quantum wire is studied. Transport through the quantum wire is investigated by using a noninteracting Anderson tunneling Hamiltonian. The conductance at zero temperature develops an oscillating band with resonances and antiresonances due to constructive and destructive interference in the ballistic channel, respectively. Moreover, we have fo...

Conductance in quantum wires by three quantum dots arrays

A noninteracting quantum-dot arrays side coupled to a quantum wire is studied. Transport through the quantum wire is investigated by using a noninteracting Anderson tunneling Hamiltonian. The conductance at zero temperature develops an oscillating band with resonances and antiresonances due to constructive and destructive interference in the ballistic channel, respectively. Moreover, we have fo...

Hole levels in InAs self-assembled quantum dots